NPN Bipolar Junction Transistor (BJT) for surface mount applications in a SOT-23 package. Features a 450V Collector-Emitter Breakdown Voltage (VCEO) and a 500V Collector-Base Voltage (VCBO). Offers a continuous collector current of 150mA and a maximum power dissipation of 806mW. Operates with a transition frequency of 50MHz and a low collector-emitter saturation voltage of 90mV. This silicon transistor is RoHS compliant and suitable for operation between -55°C and 150°C.
Frequency50MHz
PackageSOT-23
Current Rating150mA
MountingSurface Mount
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Technical Specifications
Diodes FMMT459TA technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 90mV |
| Collector Emitter Voltage (VCEO) | 450V |
| Collector-emitter Voltage-Max | 90mV |
| Continuous Collector Current | 150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 450V |
| Max Collector Current | 150mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 806mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 806mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 450V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMT459TA Datasheet
Download the complete datasheet for Diodes FMMT459TA to view detailed technical specifications.
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