NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and 1A continuous collector current. Operates with a 120V collector-base voltage and 5V emitter-base voltage. Offers a 150MHz transition frequency and 500mW maximum power dissipation. Packaged in a SOT-23-3 surface mount case, this lead-free and RoHS compliant component is supplied on tape and reel.
Diodes FMMT493ATC technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FMMT493ATC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.