NPN silicon bipolar junction transistor featuring a 1A collector current and 100V collector-emitter breakdown voltage. This single-element, 3-terminal device operates up to a maximum temperature of 150°C. Its dual terminal position facilitates efficient integration into electronic circuits.
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Technical Specifications
Diodes FMMT493QTA technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes FMMT493QTA Datasheet
Download the complete datasheet for Diodes FMMT493QTA to view detailed technical specifications.
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