
NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-23 package. Features a 100V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 1A. Offers a maximum power dissipation of 500mW and a transition frequency of 150MHz. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Diodes FMMT493TA technical specifications.
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