NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 120V Collector-Emitter Breakdown Voltage (VCEO) and 1A Continuous Collector Current (IC). Operates with a 100MHz Gain Bandwidth Product and 100MHz Transition Frequency. Packaged in a SOT-23 surface mount case, this lead-free component offers a wide operating temperature range from -55°C to 150°C.
Frequency100MHz
PackageSOT-23
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Diodes FMMT494TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
1A
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
120V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
120V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT494TA Datasheet
Download the complete datasheet for Diodes FMMT494TA to view detailed technical specifications.
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