NPN silicon bipolar junction transistor for surface mount applications. Features a 150V collector-emitter breakdown voltage, 1A continuous collector current, and 100MHz transition frequency. Includes a 300mV collector-emitter saturation voltage and 100 minimum hFE. Packaged in a compact SOT-23 case, this RoHS compliant component operates from -55°C to 150°C with a 500mW power dissipation.
Frequency100MHz
PackageSOT-23
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes FMMT495TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
170V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.1mm
hFE Min
100
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
150V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
150V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT495TA Datasheet
Download the complete datasheet for Diodes FMMT495TA to view detailed technical specifications.
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