NPN silicon bipolar junction transistor for surface mount applications. Features a 150V collector-emitter breakdown voltage, 1A continuous collector current, and 300mV collector-emitter saturation voltage. Operates across a -55°C to 150°C temperature range with a 100MHz transition frequency. Packaged in a TO-236-3 case, this lead-free component offers 500mW maximum power dissipation.
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| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 170V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 150V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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