NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector Emitter Breakdown Voltage (VCEO) and 500mA Max Collector Current. Operates with a 75MHz Gain Bandwidth Product and offers a minimum hFE of 100. Packaged in a SOT-23 surface mount case, this component is RoHS compliant and operates from -55°C to 150°C.
Frequency75MHz
PackageSOT-23
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Diodes FMMT497TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
300mV
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Frequency
75MHz
Gain Bandwidth Product
75MHz
Height
1.02mm
hFE Min
100
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
300V
Max Collector Current
500mA
Max Frequency
75MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
75MHz
DC Rated Voltage
300V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT497TA Datasheet
Download the complete datasheet for Diodes FMMT497TA to view detailed technical specifications.
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