
PNP Bipolar Junction Transistor (BJT) in SOT-23 package. Features a 30V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of -1A. Offers a transition frequency of 100MHz and a collector-emitter saturation voltage of -250mV. This silicon transistor supports a maximum power dissipation of 500mW and operates within a temperature range of -55°C to 150°C. Designed for surface mounting, it is RoHS compliant and available on tape and reel.
Diodes FMMT549TA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 750mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FMMT549TA to view detailed technical specifications.
No datasheet is available for this part.
