PNP Silicon Bipolar Junction Transistor in a SOT-23 package. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -1A. Offers a maximum power dissipation of 500mW and a transition frequency of 150MHz. Operates across a temperature range of -55°C to 200°C, with a collector-emitter saturation voltage of -350mV. Surface mountable with RoHS compliance.
Frequency150MHz
PackageSOT-23
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FMMT551TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-350mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT551TA Datasheet
Download the complete datasheet for Diodes FMMT551TA to view detailed technical specifications.
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