NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V DC rated voltage and 100V collector-emitter breakdown voltage. Offers a maximum collector current of 100mA and a continuous collector current of 0.6A. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 330mW. This surface mount component is packaged in a TO-236-3 case.
PackageTO-236-3
Current Rating400mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FMMT5551TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 400mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | FMMT5551 |
| Transition Frequency | 85MHz |
| DC Rated Voltage | 160V |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FMMT5551TA Datasheet
Download the complete datasheet for Diodes FMMT5551TA to view detailed technical specifications.
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