PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose amplification and switching. Features a 150V collector-emitter breakdown voltage and a continuous collector current of -1A. Offers a maximum power dissipation of 500mW and a transition frequency of 100MHz. Packaged in a TO-236-3 surface-mount case, this lead-free component is RoHS and REACH SVHC compliant.
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Diodes FMMT555TC technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -150V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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