PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 500V Collector-Emitter Breakdown Voltage (VCEO) and 500V Collector Base Voltage (VCBO). Offers a continuous collector current of -150mA and a maximum power dissipation of 500mW. Operates across a temperature range of -55°C to 150°C. Packaged in a SOT-23 surface-mount plastic package, this component is RoHS compliant.
Frequency60MHz
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Diodes FMMT560TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
500V
Collector Emitter Breakdown Voltage
500V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
500V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-150mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
5V
Frequency
60MHz
Gain Bandwidth Product
60MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
500V
Max Collector Current
150mA
Max Frequency
60MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
60MHz
DC Rated Voltage
-500V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT560TA Datasheet
Download the complete datasheet for Diodes FMMT560TA to view detailed technical specifications.
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