PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a 50V Collector-Base Voltage (VCBO). Offers a continuous collector current of -1A and a transition frequency of 100MHz. Packaged in a SOT-23 plastic surface mount package, this silicon transistor operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency100MHz
PackageSOT-23
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FMMT589TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
30V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-30V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT589TA Datasheet
Download the complete datasheet for Diodes FMMT589TA to view detailed technical specifications.
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