PNP Silicon Bipolar Junction Transistor (BJT) in SOT-23 package. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current. Offers a -500mV Collector-Emitter Saturation Voltage and a 5V Emitter-Base Voltage (VEBO). Operates with a 150MHz Gain Bandwidth Product and a maximum power dissipation of 500mW. Suitable for surface mount applications with a temperature range of -55°C to 150°C.
Frequency150MHz
PackageSOT-23
Voltage40V
Current1A
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Technical Specifications
Diodes FMMT591ATA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-1A
Current
1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
40V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
Voltage
40V
DC Rated Voltage
-40V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT591ATA Datasheet
Download the complete datasheet for Diodes FMMT591ATA to view detailed technical specifications.
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