PNP silicon bipolar junction transistor in SOT-23 package. Features 60V collector-emitter breakdown voltage (VCEO), 1A continuous collector current (IC), and 150MHz gain bandwidth product (fT). Offers a collector-emitter saturation voltage (VCE(sat)) of -295mV. Operates across a temperature range of -55°C to 150°C with 500mW power dissipation. Surface mountable with tape and reel packaging.
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Diodes FMMT591TA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -295mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.02mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -60V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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