PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose switching and amplification. Features a 60V collector-emitter breakdown voltage and 1A continuous collector current. Offers a -295mV collector-emitter saturation voltage and a 150MHz gain bandwidth product. Packaged in a compact SOT-23 (TO-236-3) surface-mount case, this lead-free and RoHS-compliant component operates from -55°C to 150°C with a maximum power dissipation of 500mW.
PackageTO-236-3
Current Rating-1A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes FMMT591TC technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -295mV |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.02mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -60V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMT591TC Datasheet
Download the complete datasheet for Diodes FMMT591TC to view detailed technical specifications.
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