PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1A. Offers a gain bandwidth product of 50MHz and a maximum power dissipation of 500mW. Packaged in a compact SOT-23-3 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
Frequency50MHz
PackageSOT-23-3
Voltage100V
Current1A
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Technical Specifications
Diodes FMMT593TA technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
-1A
Current
1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.1mm
hFE Min
100
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
100V
Max Collector Current
1A
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
Voltage
100V
DC Rated Voltage
-100V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT593TA Datasheet
Download the complete datasheet for Diodes FMMT593TA to view detailed technical specifications.
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