PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1A. Offers a gain bandwidth product of 50MHz and a maximum power dissipation of 500mW. Packaged in a compact SOT-23-3 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
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Diodes FMMT593TA technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -1A |
| Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1.1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| Voltage | 100V |
| DC Rated Voltage | -100V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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