
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 200V Collector-Emitter Breakdown Voltage (VCEO) and a 200V DC Rated Voltage. Offers a continuous collector current of -300mA and a maximum power dissipation of 500mW. Operates with a transition frequency of 150MHz. Packaged in a SOT-23 surface mount case, this lead-free component is RoHS compliant.
Diodes FMMT596TA technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 220V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -350mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | -300mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.02mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 300mA |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Voltage | 200V |
| DC Rated Voltage | -200V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FMMT596TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
