PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 200V Collector-Emitter Breakdown Voltage (VCEO) and a 200V DC Rated Voltage. Offers a continuous collector current of -300mA and a maximum power dissipation of 500mW. Operates with a transition frequency of 150MHz. Packaged in a SOT-23 surface mount case, this lead-free component is RoHS compliant.
Frequency150MHz
PackageSOT-23
Voltage200V
Current Rating-500mA
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Technical Specifications
Diodes FMMT596TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
220V
Collector Emitter Breakdown Voltage
200V
Collector Emitter Saturation Voltage
-350mV
Collector Emitter Voltage (VCEO)
200V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
-300mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.02mm
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
200V
Max Collector Current
300mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
Voltage
200V
DC Rated Voltage
-200V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT596TA Datasheet
Download the complete datasheet for Diodes FMMT596TA to view detailed technical specifications.
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