PNP Silicon Bipolar Junction Transistor (BJT) in SOT-23 package. Features a 300V Collector Emitter Breakdown Voltage (VCEO) and a 300V Collector Base Voltage (VCBO). Offers a continuous collector current of -200mA and a transition frequency of 75MHz. Designed for surface mount applications with a maximum power dissipation of 500mW. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency75MHz
PackageSOT-23
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes FMMT597TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-200mA
Current Rating
-200mA
Emitter Base Voltage (VEBO)
5V
Frequency
75MHz
Gain Bandwidth Product
75MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
300V
Max Collector Current
200mA
Max Frequency
75MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
75MHz
DC Rated Voltage
-300V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT597TA Datasheet
Download the complete datasheet for Diodes FMMT597TA to view detailed technical specifications.
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