NPN bipolar junction transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a 2A continuous collector current (IC). Offers a minimum DC current gain (hFE) of 300 and a transition frequency (fT) of 165MHz. Packaged in a compact SOT-23, this silicon transistor operates from -55°C to 150°C with a maximum power dissipation of 625mW. RoHS compliant and lead-free.
Frequency165MHz
PackageSOT-23
Current Rating2A
MountingSurface Mount
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Technical Specifications
Diodes FMMT619TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
220mV
Continuous Collector Current
2A
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
165MHz
Gain Bandwidth Product
165MHz
Height
1.1mm
hFE Min
300
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
50V
Max Collector Current
2A
Max Frequency
165MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
165MHz
Turn-Off Delay Time
750ns
Turn-On Delay Time
170ns
DC Rated Voltage
50V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT619TA Datasheet
Download the complete datasheet for Diodes FMMT619TA to view detailed technical specifications.
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