NPN bipolar junction transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a 2A continuous collector current (IC). Offers a minimum DC current gain (hFE) of 300 and a transition frequency (fT) of 165MHz. Packaged in a compact SOT-23, this silicon transistor operates from -55°C to 150°C with a maximum power dissipation of 625mW. RoHS compliant and lead-free.
Frequency165MHz
PackageSOT-23
Current Rating2A
MountingSurface Mount
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Technical Specifications
Diodes FMMT619TA technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 220mV |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 165MHz |
| Gain Bandwidth Product | 165MHz |
| Height | 1.1mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Frequency | 165MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 165MHz |
| Turn-Off Delay Time | 750ns |
| Turn-On Delay Time | 170ns |
| DC Rated Voltage | 50V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMT619TA Datasheet
Download the complete datasheet for Diodes FMMT619TA to view detailed technical specifications.
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