NPN bipolar junction transistor featuring a 50V collector-emitter breakdown voltage and 2A continuous collector current. This silicon transistor offers a 165MHz gain bandwidth product and a low 150mV collector-emitter saturation voltage. Packaged in a compact SOT-23 plastic surface-mount case, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW.
Frequency165MHz
PackageSOT-23
Current Rating2A
MountingSurface Mount
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Technical Specifications
Diodes FMMT619TC technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
220mV
Continuous Collector Current
2A
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
165MHz
Gain Bandwidth Product
165MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
165MHz
DC Rated Voltage
50V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT619TC Datasheet
Download the complete datasheet for Diodes FMMT619TC to view detailed technical specifications.
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