NPN bipolar junction transistor (BJT) for surface mount applications. Features a 350V collector-emitter breakdown voltage (V(BR)CEO) and 350V collector base voltage (VCBO). Offers a continuous collector current of 500mA and a maximum power dissipation of 330mW. Operates within a temperature range of -55°C to 150°C with a gain bandwidth product of 50MHz. Packaged in TO-236-3, this silicon transistor is supplied on tape and reel.
PackageTO-236-3
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FMMT6517TC technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 50MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 350V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FMMT6517TC Datasheet
Download the complete datasheet for Diodes FMMT6517TC to view detailed technical specifications.
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