PNP Bipolar Junction Transistor (BJT) designed for high voltage applications. Features a 350V Collector-Emitter Breakdown Voltage and 350V Collector-Base Voltage. Offers a continuous collector current of -500mA and a maximum power dissipation of 330mW. Packaged in a TO-236-3 surface mount case, this lead-free and RoHS compliant component operates across a temperature range of -55°C to 150°C with a transition frequency of 50MHz.
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Diodes FMMT6520TC technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | -1V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -350V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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