PNP Silicon Bipolar Junction Transistor (BJT) in SOT-23 package. Features a 20V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1.5A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 180MHz. Surface mountable with a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C.
Frequency180MHz
PackageSOT-23
Current Rating-1.5A
MountingSurface Mount
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Technical Specifications
Diodes FMMT718TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-145mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
220mV
Continuous Collector Current
-1.5A
Current Rating
-1.5A
Emitter Base Voltage (VEBO)
5V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
1mm
hFE Min
300
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
20V
Max Collector Current
1.5A
Max Frequency
180MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
180MHz
Turn-Off Delay Time
670ns
Turn-On Delay Time
40ns
DC Rated Voltage
-20V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT718TA Datasheet
Download the complete datasheet for Diodes FMMT718TA to view detailed technical specifications.
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