NPN bipolar junction transistor (BJT) for surface mount applications, featuring a 25V collector-emitter breakdown voltage and a 650MHz gain bandwidth product. This component offers a continuous collector current of 25mA and a maximum power dissipation of 330mW. It operates within a temperature range of -55°C to 150°C and is housed in a TO-236-3 (SOT23-3) package. The transistor is lead-free and RoHS compliant.
PackageTO-236-3
Current Rating25mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FMMTH10TC technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 25mA |
| Current Rating | 25mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 650MHz |
| Height | 1mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Collector Current | 25mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 650MHz |
| DC Rated Voltage | 25V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMTH10TC Datasheet
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