NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 1.25A continuous collector current and 50V collector-emitter breakdown voltage. Operates with a 180MHz transition frequency and offers a 195mV collector-emitter saturation voltage. Packaged in a 3-pin SOT-23 surface mount case, this component is RoHS compliant and operates from -55°C to 150°C.
Frequency180MHz
PackageSOT-23-3
Current Rating1.25A
MountingSurface Mount
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Technical Specifications
Diodes FMMTL619TA technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
195mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
330mV
Continuous Collector Current
1.25A
Current Rating
1.25A
Emitter Base Voltage (VEBO)
5V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
50V
Max Collector Current
1.25A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
180MHz
DC Rated Voltage
50V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMTL619TA Datasheet
Download the complete datasheet for Diodes FMMTL619TA to view detailed technical specifications.
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