NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 30V. Offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. This 4-pin transistor is housed in a SOT-223 package and is RoHS and REACH SVHC compliant.
PackageSOT-223
Current Rating1A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FZT489TA technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 30V |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FZT489TA Datasheet
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