PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter breakdown voltage and a continuous collector current of -1A. Offers a maximum power dissipation of 2W and a transition frequency of 100MHz. Packaged in a SOT-223 case, this lead-free component operates from -55°C to 150°C.
Frequency100MHz
PackageSOT-223
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FZT549TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
35V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-750mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
30V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-30V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT549TA Datasheet
Download the complete datasheet for Diodes FZT549TA to view detailed technical specifications.
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