PNP Bipolar Junction Transistor (BJT) designed for high voltage applications. Features a -400V Collector Base Voltage (VCBO) and 400V Collector Emitter Breakdown Voltage, with a maximum Collector-Emitter Voltage of 500mV. Offers a continuous collector current of -200mA and a transition frequency of 50MHz. Packaged in a surface-mount SOT-223 case, this lead-free and RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2W.
PackageSOT-223
Current Rating-200mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes FZT558TC technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -200mA |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -400V |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FZT558TC Datasheet
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