
PNP Bipolar Junction Transistor (BJT) for medium power applications, featuring a 60V collector-emitter breakdown voltage and a continuous collector current of -1A. This surface mount device, housed in a SOT-223 package, offers a maximum power dissipation of 2W and a transition frequency of 150MHz. Operating across a temperature range of -55°C to 150°C, it supports a collector base voltage of 80V and an emitter base voltage of -5V.
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Diodes FZT591TC technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -60V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Not Compliant |
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