
NPN Silicon Bipolar Junction Transistor, 2A continuous collector current, 80V collector-emitter breakdown voltage. Features 1.13V collector-emitter saturation voltage and 150MHz transition frequency. Packaged in a 4-pin SOT-223 surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2W.
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Diodes FZT603TA technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.13V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.13V |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 80V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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