
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage and a 3A continuous collector current. Offers a maximum power dissipation of 2W and a transition frequency of 175MHz. Packaged in SOT-223 with 4 pins, this component is lead-free, RoHS compliant, and REACH SVHC compliant.
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Diodes FZT651TC technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 430mV |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 175MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 175MHz |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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