NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 150V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 1A. Offers a maximum power dissipation of 2W and a transition frequency (fT) of 30MHz. Packaged in a SOT-223 case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency30MHz
PackageSOT-223
Voltage150V
Current1A
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Technical Specifications
Diodes FZT655TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
180mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
1A
Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
150V
Max Collector Current
1A
Max Frequency
30MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
30MHz
Voltage
150V
DC Rated Voltage
150V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT655TA Datasheet
Download the complete datasheet for Diodes FZT655TA to view detailed technical specifications.
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