NPN bipolar junction transistor featuring a 100V collector-emitter breakdown voltage and 1.5A continuous collector current. This silicon transistor offers a minimum hFE of 10000 and a transition frequency of 200MHz. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W. The component is RoHS and REACH SVHC compliant, supplied on tape and reel.
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| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 1.5A |
| Emitter Base Voltage (VEBO) | 12V |
| Height | 1.65mm |
| hFE Min | 10000 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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