PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 120V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -2A. This 1-element transistor offers a maximum power dissipation of 2W and a transition frequency of 160MHz. Packaged in a SOT-223 case, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | -2A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| DC Rated Voltage | -120V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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