
PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a continuous collector current of -3A, collector-emitter breakdown voltage of 25V, and a transition frequency of 160MHz. This 1-element transistor offers a minimum DC current gain (hFE) of 70 and a maximum power dissipation of 2W. Packaged in SOT-223, it operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
Diodes FZT749TC technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -35V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | -3A |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 160MHz |
| Height | 1.65mm |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| DC Rated Voltage | -25V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FZT749TC to view detailed technical specifications.
No datasheet is available for this part.