PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -2A. Offers a gain bandwidth product of 140MHz and a maximum power dissipation of 2W. Packaged in a SOT-223 case, this component operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
Frequency140MHz
PackageSOT-223
Voltage100V
Current2A
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Technical Specifications
Diodes FZT753TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-2A
Current
2A
Current Rating
-2A
Emitter Base Voltage (VEBO)
5V
Frequency
140MHz
Gain Bandwidth Product
140MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
100V
Max Collector Current
2A
Max Frequency
140MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
140MHz
Voltage
100V
DC Rated Voltage
-100V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT753TA Datasheet
Download the complete datasheet for Diodes FZT753TA to view detailed technical specifications.
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