PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 15V. Offers a collector-emitter saturation voltage of -500mV and a transition frequency of 100MHz. Packaged in a SOT-223 case, this component operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 2W. RoHS and REACH SVHC compliant.
Diodes FZT788BTA technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 3A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -15V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FZT788BTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
