NPN bipolar junction transistor (BJT) for surface mount applications. Features a 6A continuous collector current, 60V collector-emitter breakdown voltage, and 150V collector base voltage. Operates with a 130MHz transition frequency and offers a minimum DC current gain (hFE) of 100. Housed in a SOT-223 package, this silicon transistor supports a maximum power dissipation of 3W and operates within a temperature range of -55°C to 150°C.
Frequency130MHz
PackageSOT-223
Current Rating6A
MountingSurface Mount
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Technical Specifications
Diodes FZT851TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
375mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
375mV
Continuous Collector Current
6A
Current Rating
6A
Emitter Base Voltage (VEBO)
6V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.65mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
60V
Max Collector Current
6A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
130MHz
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT851TA Datasheet
Download the complete datasheet for Diodes FZT851TA to view detailed technical specifications.
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