NPN bipolar junction transistor (BJT) for surface mount applications. Features a 6A continuous collector current, 60V collector-emitter breakdown voltage, and 150V collector base voltage. Operates with a 130MHz transition frequency and offers a minimum DC current gain (hFE) of 100. Housed in a SOT-223 package, this silicon transistor supports a maximum power dissipation of 3W and operates within a temperature range of -55°C to 150°C.
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Diodes FZT851TA technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 375mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 375mV |
| Continuous Collector Current | 6A |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| Height | 1.65mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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