NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 5A continuous collector current and 150V collector-emitter breakdown voltage. Operates with a maximum power dissipation of 3W and a transition frequency of 90MHz. Packaged in a SOT-223 case, this component is RoHS compliant and designed for a wide operating temperature range from -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes FZT855TA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 355mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 355mV |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 90MHz |
| Gain Bandwidth Product | 90MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 5A |
| Max Frequency | 90MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 90MHz |
| DC Rated Voltage | 150V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FZT855TA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
