NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 5A continuous collector current and 150V collector-emitter breakdown voltage. Operates with a maximum power dissipation of 3W and a transition frequency of 90MHz. Packaged in a SOT-223 case, this component is RoHS compliant and designed for a wide operating temperature range from -55°C to 150°C.
Frequency90MHz
PackageSOT-223
Current Rating5A
MountingSurface Mount
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Technical Specifications
Diodes FZT855TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
250V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
355mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
355mV
Continuous Collector Current
5A
Current Rating
5A
Emitter Base Voltage (VEBO)
6V
Frequency
90MHz
Gain Bandwidth Product
90MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
150V
Max Collector Current
5A
Max Frequency
90MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
90MHz
DC Rated Voltage
150V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT855TA Datasheet
Download the complete datasheet for Diodes FZT855TA to view detailed technical specifications.
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