NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 300V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 3.5A. Offers a maximum power dissipation of 3W and a transition frequency of 80MHz. Packaged in a SOT-223 case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
Frequency80MHz
PackageSOT-223
Current Rating3.5A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes FZT857TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
350V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
345mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
345mV
Continuous Collector Current
3.5A
Current Rating
3.5A
Emitter Base Voltage (VEBO)
6V
Frequency
80MHz
Gain Bandwidth Product
80MHz
Height
1.65mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
300V
Max Collector Current
3.5A
Max Frequency
80MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
80MHz
DC Rated Voltage
300V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT857TA Datasheet
Download the complete datasheet for Diodes FZT857TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
