PNP Silicon Bipolar Junction Transistor, surface mountable in a SOT-223 package. Features a continuous collector current of -4A, collector-emitter breakdown voltage of 140V, and a transition frequency of 110MHz. Offers a maximum power dissipation of 3W and operates within a temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
Frequency110MHz
PackageSOT-223
Current Rating-4A
MountingSurface Mount
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Technical Specifications
Diodes FZT955TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
140V
Collector Emitter Saturation Voltage
-370mV
Collector Emitter Voltage (VCEO)
140V
Collector-emitter Voltage-Max
370mV
Continuous Collector Current
-4A
Current Rating
-4A
Emitter Base Voltage (VEBO)
6V
Frequency
110MHz
Gain Bandwidth Product
110MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
140V
Max Collector Current
4A
Max Frequency
110MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
110MHz
DC Rated Voltage
-140V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT955TA Datasheet
Download the complete datasheet for Diodes FZT955TA to view detailed technical specifications.
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