PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 300V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of -1A. Offers a maximum power dissipation of 3W and a transition frequency of 85MHz. Packaged in SOT-223, this component is lead-free, RoHS compliant, and REACH SVHC compliant.
Frequency85MHz
PackageSOT-223
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FZT957TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
-170mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
240mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
6V
Frequency
85MHz
Gain Bandwidth Product
85MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
300V
Max Collector Current
1A
Max Frequency
85MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
85MHz
DC Rated Voltage
-300V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT957TA Datasheet
Download the complete datasheet for Diodes FZT957TA to view detailed technical specifications.
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