PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. Operates with a 200MHz transition frequency and a -600mV collector-emitter saturation voltage. Housed in a 6-lead SOT-26 plastic package, this surface-mount device is RoHS and REACH SVHC compliant, operating from -55°C to 150°C.
PackageSOT-26
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes IMT17-7 technical specifications.
General
Package/Case
SOT-26
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-600mV
Collector-emitter Voltage-Max
600mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
200MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
50V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
200MHz
Weight
0.001058oz
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes IMT17-7 Datasheet
Download the complete datasheet for Diodes IMT17-7 to view detailed technical specifications.
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