PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. Operates with a 200MHz transition frequency and a -600mV collector-emitter saturation voltage. Housed in a 6-lead SOT-26 plastic package, this surface-mount device is RoHS and REACH SVHC compliant, operating from -55°C to 150°C.
PackageSOT-26
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes IMT17-7 technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -600mV |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.001058oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes IMT17-7 Datasheet
Download the complete datasheet for Diodes IMT17-7 to view detailed technical specifications.
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