NPN silicon bipolar junction transistor (BJT) in a 2-element configuration, designed for small signal applications. Features a maximum collector current of 50mA and a collector-emitter breakdown voltage of 120V. Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 140MHz. Packaged in a surface-mount SOT-26 plastic package, this component operates across a temperature range of -55°C to 150°C.
PackageSOT-26
Current Rating50mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes IMX8-7 technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 140MHz |
| Height | 1.1mm |
| hFE Min | 180 |
| Lead Free | Contains Lead |
| Length | 3mm |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 140MHz |
| DC Rated Voltage | 120V |
| Weight | 0.001058oz |
| Width | 1.6mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes IMX8-7 Datasheet
Download the complete datasheet for Diodes IMX8-7 to view detailed technical specifications.
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