NPN silicon bipolar junction transistor (BJT) in a 2-element configuration, designed for small signal applications. Features a maximum collector current of 50mA and a collector-emitter breakdown voltage of 120V. Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 140MHz. Packaged in a surface-mount SOT-26 plastic package, this component operates across a temperature range of -55°C to 150°C.
PackageSOT-26
Current Rating50mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes IMX8-7 technical specifications.
General
Package/Case
SOT-26
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
500mV
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
50mA
Current Rating
50mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
140MHz
Height
1.1mm
hFE Min
180
Lead Free
Contains Lead
Length
3mm
Max Breakdown Voltage
120V
Max Collector Current
50mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
RoHS Compliant
No
Transition Frequency
140MHz
DC Rated Voltage
120V
Weight
0.001058oz
Width
1.6mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes IMX8-7 Datasheet
Download the complete datasheet for Diodes IMX8-7 to view detailed technical specifications.
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