NPN bipolar junction transistor (BJT) for surface mount applications. Features a 1A continuous collector current, 18V collector-emitter breakdown voltage, and a 100MHz transition frequency. Housed in a compact SOT-23 plastic package, this silicon transistor offers a minimum DC current gain (hFE) of 150 and a maximum collector-emitter saturation voltage of 500mV. Operating temperature range spans from -55°C to 150°C, with a power dissipation of 300mW. This component is lead-free, RoHS compliant, and suitable for automotive applications.
Frequency100MHz
PackageSOT-23
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes MMBT123S-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
18V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
18V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
150
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
18V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
100MHz
DC Rated Voltage
18V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT123S-7-F Datasheet
Download the complete datasheet for Diodes MMBT123S-7-F to view detailed technical specifications.
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