MMBT123S-7-F

Datasheet

NPN BJT Transistor, 1A, 18V, 100MHz, SOT-23, SM

Diodes

MMBT123S-7-F

Name: MMBT123S-7-F Diodes
Brand: Diodes
SKU: MMBT123S-7-F

NPN BJT Transistor, 1A, 18V, 100MHz, SOT-23, SM

NPN bipolar junction transistor (BJT) for surface mount applications. Features a 1A continuous collector current, 18V collector-emitter breakdown voltage, and a 100MHz transition frequency. Housed in a compact SOT-23 plastic package, this silicon transistor offers a minimum DC current gain (hFE) of 150 and a maximum collector-emitter saturation voltage of 500mV. Operating temperature range spans from -55°C to 150°C, with a power dissipation of 300mW. This component is lead-free, RoHS compliant, and suitable for automotive applications.

Frequency100MHz

PackageSOT-23

Current Rating1A

MountingSurface Mount

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Technical Specifications

Diodes MMBT123S-7-F technical specifications.

General

Package/Case	SOT-23
Collector Base Voltage (VCBO)	45V
Collector Emitter Breakdown Voltage	18V
Collector Emitter Saturation Voltage	500mV
Collector Emitter Voltage (VCEO)	18V
Collector-emitter Voltage-Max	500mV
Continuous Collector Current	1A
Current Rating	1A
Emitter Base Voltage (VEBO)	5V
Frequency	100MHz
Gain Bandwidth Product	100MHz
Height	1mm
hFE Min	150
Lead Free	Lead Free
Length	3.05mm
Max Breakdown Voltage	18V
Max Collector Current	1A
Max Frequency	100MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300mW
Mount	Surface Mount
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	300mW
Radiation Hardening	No
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Series	Automotive, AEC-Q101
Transition Frequency	100MHz
DC Rated Voltage	18V
Weight	0.000282oz
Width	1.4mm