NPN Silicon Bipolar Junction Transistor (BJT) for switching applications. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Packaged in a TO-236-3 (SOT-23) surface-mount plastic package. Operates across a temperature range of -55°C to 150°C.
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Diodes MMBT2222A-7 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 600mA |
| Current Rating | 600mA |
| DC Current Gain-Min (hFE) | 40 |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 100 |
| JESD-30 Code | R-PDSO-G3 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Moisture Sensitivity Level | 1 |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Quantity | 1 |
| Package Shape | Rectangular |
| Packaging | Tape and Reel |
| Peak Reflow Temperature (Cel) | 245°C |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 5s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| Weight | 0.00709oz |
| Width | 1.4mm |
| RoHS | Not CompliantNo |
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