NPN Silicon Bipolar Junction Transistor (BJT) for switching applications. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Packaged in a TO-236-3 (SOT-23) surface-mount plastic package. Operates across a temperature range of -55°C to 150°C.
PackageTO-236-3
Current Rating600mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes MMBT2222A-7 technical specifications.
General
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
40V
Collector-emitter Voltage-Max
1V
Continuous Collector Current
600mA
Current Rating
600mA
DC Current Gain-Min (hFE)
40
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
100
JESD-30 Code
R-PDSO-G3
Lead Free
Contains Lead
Length
3.05mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
1
Package Body Material
Plastic
Package Quantity
1
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
245°C
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
5s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.00709oz
Width
1.4mm
Compliance
RoHS
Not CompliantNo
Datasheet
Diodes MMBT2222A-7 Datasheet
Download the complete datasheet for Diodes MMBT2222A-7 to view detailed technical specifications.
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