DIODES

MMBT2222A-7

Datasheet

NPN BJT, 40V, 600mA, 300MHz, SMT, TO-236-3

Diodes

MMBT2222A-7

Name: MMBT2222A-7 Diodes
Brand: Diodes
SKU: MMBT2222A-7

NPN BJT, 40V, 600mA, 300MHz, SMT, TO-236-3

NPN Silicon Bipolar Junction Transistor (BJT) for switching applications. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Packaged in a TO-236-3 (SOT-23) surface-mount plastic package. Operates across a temperature range of -55°C to 150°C.

PackageTO-236-3

Current Rating600mA

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes MMBT2222A-7 technical specifications.

General

Package/Case	TO-236-3
Collector Base Voltage (VCBO)	75V
Collector Emitter Breakdown Voltage	40V
Collector-emitter Voltage-Max	1V
Continuous Collector Current	600mA
Current Rating	600mA
DC Current Gain-Min (hFE)	40
Emitter Base Voltage (VEBO)	6V
Gain Bandwidth Product	300MHz
Height	1mm
hFE Min	100
JESD-30 Code	R-PDSO-G3
Lead Free	Contains Lead
Length	3.05mm
Max Breakdown Voltage	40V
Max Collector Current	600mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Number of Elements	1
Package Body Material	Plastic
Package Quantity	1
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	245°C
Polarity	NPN
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	No
Surface Mount	Yes
Terminal Form	Gull Wing
Terminal Position	DUAL
Time @ Peak Reflow Temperature-Max (s)	5s
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Transition Frequency	300MHz
DC Rated Voltage	40V
Weight	0.00709oz
Width	1.4mm