
NPN bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 600mA. Operates with a maximum power dissipation of 150mW and a transition frequency of 300MHz. Housed in an ultra-small, 3-pin plastic SOT-523 surface mount package. Compliant with RoHS standards and designed for automotive applications.
Diodes MMBT2222AT-7-F technical specifications.
Download the complete datasheet for Diodes MMBT2222AT-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
