PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and 600mA continuous collector current. Operates with a -60V collector base voltage and -5V emitter base voltage. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in a TO-236-3 (SOT-23) surface mount plastic package, suitable for tape and reel. Maximum power dissipation is 300mW with an operating temperature range of -55°C to 150°C.
PackageTO-236-3
Current Rating-150mA
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Diodes MMBT2907A-7 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | -600mA |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -60V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes MMBT2907A-7 Datasheet
Download the complete datasheet for Diodes MMBT2907A-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
